邵永亮，男，山东省济南市人，1985年12月出生，工学博士，副教授，
邮箱：shaoyongliang@qlu.edu.cn
主要从事宽禁带半导体氮化物单晶材料的生长、加工和性能研究，以及SEM、EDS和背散射电子衍射（EBSD）测试技术的研究工作，特别是在GaN晶体材料领域取得了一系列原创性成果。提出了一种通过晶体取向数据分析单晶应力的方法，拓展了EBSD在化合物半导体晶体材料的结构、缺陷和应力分析领域的应用；设计了多种新型缓冲衬底实现了GaN单晶中缺陷和应力的控制，掌握了高质量GaN单晶生长关键技术，主持国家级项目1项，参与国家和省级项目5项，2019年获山东省重点扶持区域引进急需紧缺人才项目支持。发表SCI收录学术论文70余篇，其中第一作者或通讯作者的SCI收录论文13篇。解决了相关技术从实验室走向企业的关键问题，提高了GaN单晶生长与衬底加工的技术成熟度，作为主要骨干成员在GaN单晶衬底技术实现产业转化过程中起到重要作用。
教育经历：
2008/9-2013/12，山东大学，晶体材料研究所，博士
2004/9-2008/6，西北工业大学，理学院应用物理系，学士
工作经历：
2020/11至今，齐鲁工业大学，材料科学与工程学院，副教授
2015/9-2020/10，山东大学，晶体材料研究所，实验师
研究方向
1.氮化物半导体晶体的生长、加工及其结构和性能研究。
2.氮化物半导体材料在能源领域应用。
3.背散射电子衍射技术在单晶材料结构与性能分析的应用。
主要科研项目：
1. 国家自然科学基金委员会，青年科学基金项目，利用EBSD技术研究异质外延GaN单晶的缺陷和应力，2017-01至2019-12，主持
2.山东省重点扶持区域引进急需紧缺人才项目，2英寸GaN单晶HVPE生长研究及产业化项目，2019年度，主持
3 国家自然科学基金委员会，面上项目，新型衬底上高质量GaN单晶的HVPE生长及自剥离研究，2016-01至2019-12，参与
4. 山东省科学技术厅，山东省科技攻关项目，2010GGX10340、蓝光LED用GaN单晶衬底材料研制，2010-9至2012-12，参与
部分代表性论文
1. Mingzhi Yang, Dong Shi, Xiucai Sun, Yanlu Li, Zhenyan Liang, Lei Zhang, Yongliang Shao*, Yongzhong Wu*, Xiaopeng Hao, Shuttle confinement of lithium polysulfides in borocarbonitride nanotubes with enhanced performance for lithium–sulfur batteries, Journal of Materials Chemistry A, 2020, 8,296-304
2. Haixiao Hu, Baoguo Zhang, Lei Liu, Deqin Xu, Yongliang Shao*, Yongzhong Wu*, Xiaopeng Hao, Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process, Crystals, 2020, 10, 141
3. Zizheng Ai, Bin Chang, Chengwei Xu, Baibiao Huang, Yongzhong Wu, Xiaopeng Hao, Yongliang Shao*, Interface engineering in the BNNS@Ti3C2 intercalation structure for enhanced electrocatalytic hydrogen evolution, New Journal of Chemistry,2019, 43, 8613-8619
4. Haixiao Hu, Bin Chang, Xiucai Sun, Qin Huo, Baoguo Zhang , Yanlu Li, Yongliang Shao*, Lei Zhang, Yongzhong Wu, Xiaopeng Hao*, Intrinsic properties of macroscopically tuned gallium nitride single crystalline facets for electrocatalytic hydrogen evolution, Chemistry - A European Journal, 2019, 25, 10420-10426
5. Haixiao Hu, Baoguo Zhang, Yongzhong Wu, Yongliang Shao*, Lei Liu, Xiaopeng Hao*, High-Quality GaN Crystal Grown on Laser Decomposed GaN-Sapphire Substrate and Its Application in Photodetector, Physica Status Solidi (A) Applications and Materials Science, 2020, 217, 2000380
6. Yuan Tian, Yongliang Shao*, Xiaopeng Hao, Yongzhong Wu, Lei Zhang, Yuanbin Dai, Qin Huo, Baoguo Zhang, Haixiao Hu, Preparation and optimization of freestanding GaN using low-temperature GaN layer, Frontiers of Materials Science, 2019, 13, 314-322
7. Baoguo Zhang, Yongzhong Wu, Lei Zhang, Qin Huo, Haixiao Hu, Fukun Ma,Mingzhi Yang, Dong Shi, Yongliang Shao*, Xiaopeng Hao*, Growth of high-quality GaN crystals on a BCN nanosheet-coated substrate by hydride vapor phase epitaxy, CrystEngComm, 2019, 21，1302-1308
8. Ruixian Yu, Baoguo Zhang, Lei Zhang, Yongzhong Wu, Haixiao Hu, Lei Liu, Yongliang Shao*, Xiaopeng Hao, Fabrication of Pyramid Structure Substrate Utilized for Epitaxial Growth Free-Standing GaN, Crystals, 2019, 9, 547
9. Jiaxin Lv, Changlong Sun, Fukun Ma, Yongzhong Wu, Yongliang Shao*, Ferromagnetism of p-doped BN nanosheets prepared by red phosphorus assisted ball-milling exfoliated technique, Journal of Materials Science: Materials in Electronics, 2017, 28: 13149-13156
10. Tailin Wang, Gang Zhao, Changlong Sun, Lei Zhang, Yongzhong Wu, Xiaopeng Hao, Yongliang Shao*, Graphene-Assisted Exfoliation of Molybdenum Disulfide to Fabricate 2D Heterostructure for Enhancing Lithium Storage, Advanced Materials Interfaces, 2017, 1601187
11. Yongliang Shao, Yuanbin Dai, Xiaopeng Hao*, Yongzhong Wu, Lei Zhang, Haodong Zhang, Yuan Tian, EBSD crystallographic orientation research on strain distribution in hydride vapor phase epitaxy GaN grown on patterned substrate，CrystEngComm, 2013, 15: 7965-7969
12. Yongliang Shao, Lei Zhang, Xiaopeng Hao*, Yongzhong Wu, Xiufang Chen, Shuang Qu, Xiangang Xu, Minhua Jiang, Influence of GaCl carrier gasflow rate on properties of GaN films grown by hydride vapor-phase epitaxy, Journal of Alloys and Compounds, 2011, 509(21): 6212-6216
部分授权专利
1. 一种水热腐蚀多孔衬底生长自支撑氮化镓单晶的方法，郝霄鹏；张保国；邵永亮；吴拥中；霍勤；胡海啸；ZL201710601044.3
2. 在SiC衬底上直接生长自剥离GaN单晶的方法，郝霄鹏；田媛；邵永亮；吴拥中；张雷；戴元滨；霍勤；ZL201410113538.3
3. 利用六方氮化硼纳米片生长高质量氮化镓晶体的方法，郝霄鹏；李先磊；张雷；邵永亮；吴拥中；戴元滨；田媛；霍勤；ZL201410024671.1